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> 61C256 / IS61C256AH-20JI / IS61C256AH / static ram
61C256 / IS61C256AH-20JI / IS61C256AH / static ram
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• High-speed access time: 10, 12, 15, 20 ns
• Low active power: 400 mW (typical)
— 250 µW (typical) CMOS standby
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
ISSI IS61C256AH is a very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum.
CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (
CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.
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